H E N G C E R A

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AuSn prepared

AuSn prepared

  • Line Width: ≥0.01mm
  • Lines Gap: ≥0.01mm
  • Diameter of plated thru via: ≥0.20mm / ≥1/2 thickness of Substrate
  • Gap between vias: ≥One diameter
  • Gap Between Vias and Substrate Edge: ≥One diameter
  • Gap between vias and metalized edge: ≥0.0635mm
  • Metallization Thickness: TiW or Ti 0.03-0.08 μm / Ni or Pt 0.1-1μm / Au 0.5-10μm / Cu 0.5-25 μm
  • Resistor Length and Width: ≥0.0254mm
  • AuSn Length and Width: ≥0.05mm
  • AuSn Thickness: 4-6 μm

AuSn prepared